Influence of Precursor Temperature on Bi Doped ZnSe Material via Electrochemical Deposition Technique for Photovoltaic Application

Imosobomeh L. Ikhioya; Eli Danladi; Okoli D. Nnanyere; Abdulazeez O. Salawu

doi:10.46481/jnsps.2022.502

Authors

Imosobomeh L. Ikhioya Department of Physics and Astronomy, Faculty of Physical Sciences, University of Nigeria, Nsukka, Enugu State, Nigeria
Eli Danladi
danladielibako@gmail.com
Department of Physics, Faculty of Science, Federal University of Health Sciences, Otukpo, Benue State, Nigeria
Okoli D. Nnanyere Department of Physics and Industrial Physics, Faculty of Physical Sciences, Nnamdi Azikiwe University, Awka, Anambra State, Nigeria
Abdulazeez O. Salawu Department of Computer Science, Nile University of Nigeria

Keywords:

ZnSe, Doping, Precursor temperature, Photovoltanic, Electrochemical deposition

Abstract

In this study, Bismuth (Bi) doped ZnSe thin films were deposited on conducting glass substrates by electrochemical deposition technique and the influence of precursor temperature (room, 50, 55, 60 oC) on their optical and structural properties were systematically studied using the combined effect of X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and UV-VIS spectrophotometer. The XRD patterns show a face-centred cubic structure indexed with peaks at (220), (221) and (300). The grain size was in the range of 3.24056 to 4.60481 nm with a lattice constant of 7.189Å. The material deposited at room, 500C, 550C, and 600C reveals agglomeration of particle on the surface of the substrate indicating uniform deposition. The optical spectra show that at different temperature (say room, 50oC, 55oC and 60oC), the absorbance and reflectance of BiZnSe thin films decreases with increase in wavelength of the incident radiation while the transmittance shows direct proportionality with the increase in wavelength. The bandgap demonstrated an increase in the range 1.75-2.25 eV with increase in temperature.

Dimensions

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